Doping induced structural changes in CuInS2 thin films and the effects on optical and electrical properties

Abstract The systematical study of the admixture of small amounts of group‐II elements (<1 at%) with Raman and photoluminescence spectroscopy reveal an increase in the Raman response of the cation‐anion vibration modes accompanied with the generation of a new broad emission band at 1.35 eV in the PL spectra of the chalcopyrite system Cu–In–S. Intensity dependent PL measurements indicate that this emission band is strongly influenced by a high degree of compensation in contrast to the commonly found donor‐acceptor pair recombination in undoped CuInS 2 samples. From temperature dependent conductivity measurements an increased concentration of acceptors and donors in doped CuInS 2 thin films is found. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)