电压降
发光二极管
电致发光
材料科学
光电子学
量子阱
二极管
宽禁带半导体
化学气相沉积
自发辐射
量子效率
电流密度
光学
功率(物理)
物理
纳米技术
激光器
图层(电子)
量子力学
分压器
作者
C. H. Wang,Sheng-Po Chang,W. T. Chang,J. C. Li,Y. S. Lu,Z. Y. Li,Hung‐Chih Yang,Hao‐Chung Kuo,Tien‐Chang Lu,S. C. Wang
摘要
InGaN/GaN light-emitting diodes (LEDs) with graded-thickness multiple quantum wells (GQW) was designed and grown by metal-organic chemical vapor deposition. The GQW structure, in which the well-thickness increases along [0001] direction, was found to have superior hole distribution as well as radiative recombination distribution by performing simulation modeling. Accordingly, the experimental investigation of electroluminescence spectrum reveals additional emission from the narrower wells within GQWs. Consequently, the efficiency droop can be alleviated to be about 16% from maximum at current density of 30 to 200 A/cm2, which is much smaller than that for conventional LED (32%). Moreover, the light output power was enhanced from 18.0 to 24.3 mW at 20 A/cm2.
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