Halo Doping: Physical Effects and Compact Modeling

In this paper, we present the physical effects observed when halo implants are used to control short channel effects (SCE). The impact of using halo implants was studied using a 2 or 3 segmented transistor. The multi-segmented transistor model approach show that (1) the mobility needed to match IV data shows an artificial length dependence, (2) the threshold voltage needed to match the IV data is different from the threshold voltage needed to match CV data and (3) the NQS effects are more severe for halo transistors. Two dimensional numerical devices simulations were also performed to comprehend the observed output resistance degradation. Based on these numerical simulations a 2-transistor model is proposed to describe output resistance in compact models.