凝聚态物理
拓扑绝缘体
量子隧道
电导
物理
横截面
磁化
绝缘体(电)
平面的
拓扑(电路)
材料科学
磁场
量子力学
光电子学
计算机图形学(图像)
组合数学
工程类
结构工程
计算机科学
数学
作者
Benedikt Scharf,Alex Matos-Abiague,Jong E. Han,Ewelina M. Hankiewicz,Igor Žutić
标识
DOI:10.1103/physrevlett.117.166806
摘要
We investigate tunneling across a single ferromagnetic barrier on the surface of a three-dimensional topological insulator. In the presence of a magnetization component along the bias direction, a tunneling planar Hall conductance (TPHC), transverse to the applied bias, develops. Electrostatic control of the barrier enables a giant Hall angle, with the TPHC exceeding the longitudinal tunneling conductance. By changing the in-plane magnetization direction, it is possible to change the sign of both the longitudinal and transverse differential conductance without opening a gap in the topological surface state. The transport in a topological-insulator-ferromagnet junction can, thus, be drastically altered from a simple spin valve to an amplifier.
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