材料科学
傅里叶变换红外光谱
表征(材料科学)
半导体
碳化硅
红外线的
硅
纳米尺度
叠加断层
红外光谱学
宽禁带半导体
光谱学
光电子学
纳米技术
光学
化学
位错
物理
复合材料
有机化学
量子力学
作者
Scott G. Criswell,Nadeemullah A. Mahadik,James C. Gallagher,Julian Barnett,Luke Kim,Morvarid Ghorbani,Bhaveshkumar Kamaliya,Nabil Bassim,Thomas Taubner,Joshua D. Caldwell
出处
期刊:Nano Letters
[American Chemical Society]
日期:2024-01-02
标识
DOI:10.1021/acs.nanolett.3c03369
摘要
Extended defects in wide-bandgap semiconductors have been widely investigated using techniques providing either spectroscopic or microscopic information. Nano-Fourier transform infrared spectroscopy (nano-FTIR) is a nondestructive characterization method combining FTIR with nanoscale spatial resolution (∼20 nm) and topographic information. Here, we demonstrate the capability of nano-FTIR for the characterization of extended defects in semiconductors by investigating an in-grown stacking fault (IGSF) present in a 4H-SiC epitaxial layer. We observe a local spectral shift of the mid-infrared near-field response, consistent with the identification of the defect stacking order as 3C-SiC (cubic) from comparative simulations based on the finite dipole model (FDM). This 3C-SiC IGSF contrasts with the more typical 8H-SiC IGSFs reported previously and is exemplary in showing that nanoscale spectroscopy with nano-FTIR can provide new insights into the properties of extended defects, the understanding of which is crucial for mitigating deleterious effects of such defects in alternative semiconductor materials and devices.
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