阈值电压
晶体管
与非门
反向短通道效应
系列(地层学)
干扰(通信)
频道(广播)
过驱动电压
弦(物理)
短通道效应
电压
材料科学
MOSFET
电子工程
光电子学
计算机科学
物理
电气工程
工程类
电信
量子力学
生物
古生物学
作者
Quan Nguyen-Gia,Hyungcheol Shin
标识
DOI:10.1109/tcad.2023.3302728
摘要
In this article, we introduce a model to calculate the threshold voltage of the victim transistor attacked by the neighbor transistors with a macaroni structure. Using this model, we investigate the shift of the victim threshold voltage to get insight into the interference effect of NAND cells in a string with different structural parameters and biases. The fitting between simulations and calculations confirms the validity of these models.
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