材料科学
钙钛矿(结构)
发光二极管
二极管
光电子学
热稳定性
红外线的
电流密度
卤化物
工程物理
光学
化学工程
物理
化学
结晶学
工程类
无机化学
量子力学
作者
Zhaoyi Wang,Gan Zhang,Zhixiang Ren,Yichen Yang,Zixiang Wang,Hualong Chen,Shiyu Xing,Yucai Yuan,Yaxin Wang,Shengnan Liu,Zhendong Cheng,Runchen Lai,Chen Zou,Weidong Tang,Baodan Zhao,Dawei Di
标识
DOI:10.1002/adma.202502659
摘要
Abstract Perovskite light‐emitting diodes (PeLEDs) have emerged as a promising candidate for next‐generation display technologies, owing to their high efficiency and color purity. However, the operational instability of PeLEDs at high current densities (>100 mA cm −2 ) remains a significant challenge. Here, near‐infrared (≈797 nm) PeLEDs are reported with peak external quantum efficiencies (EQEs) of ≈24.7% and EQEs of >20% across a wide range of current densities (70–1200 mA cm −2 ), resulting in an ultra‐high peak radiance of 2270 W sr −1 m −2 . These PeLEDs exhibit outstanding operational stability with operational lifetimes ( T 50 ) of 6.6, 12.7, 19.2, 49.5, 238.6, and 350 h at current densities of 500, 400, 300, 200, 100, and 50 mA cm −2 , respectively. The high stability is enabled by a multifunctional stabilizer containing formamidine groups, which prevent phase transition and decomposition of the α‐FAPbI 3 perovskite under elevated temperatures. This work demonstrates the feasibility of achieving efficient and stable PeLEDs at high current densities, providing strategies for the development of high‐power optoelectronic devices based on halide perovskites.
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