卤化物
钝化
钙钛矿(结构)
材料科学
金属
无机化学
光电子学
化学工程
纳米技术
化学
冶金
图层(电子)
工程类
作者
Srimanta Gogoi,Saikat Das,Ruchir Gupta,Sachin Verma
标识
DOI:10.1021/acs.jpclett.5c00273
摘要
High carrier temperature and slow carrier cooling make perovskite nanostructures potential candidates for hot-carrier solar cells. Here, using time-resolved photoluminescence spectroscopy, hot-carrier dynamics is reported in strongly confined three-monolayer quasi-2D CsPbBr3 perovskite nanoplatelets characterized by sharp excitonic peaks in the absorption spectrum and narrow emission peaks in the blue region. Treatment with a PbBr2-ligand solution resulted in a remarkable seven-fold increase in photoluminescence intensity, attributed to effective passivation of surface defects due to lead(II) and bromide vacancies. Further investigations using time-resolved emission spectroscopy revealed consistent carrier cooling times of ∼300 fs for both pristine and treated nanoplatelets, indicating similar fundamental hot-carrier cooling processes. Notably, treated nanoplatelets exhibited higher carrier temperature (∼700 K), linked to increased radiative carrier density after defect passivation. This work demonstrates that treatment of quasi-2D CsPbBr3 perovskite nanoplatelets with metal halides substantially improves the optoelectronic properties. Notably, hot-carrier temperatures can be increased significantly while preserving the cooling time.
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