Reduction of oxygen concentration in 300 mm diameter n-type Czochralski silicon crystal growth using an optimized heating zone with dual side-heaters

In this study, the modified heating zone structure for 300 mm diameter Cz-Si crystal growth with dual side-heaters has been proposed. Based on it, 300 mm diameter n-type RCz-Si crystals with the oxygen concentration of 9.5–10.5 ppma were obtained.