Metal‐Organic Chemical Vapor Deposition of Oxide Perovskite Films: A Facile Route to Complex Functional Systems

Abstract Perovskite oxide type materials exhibit a great profusion of unique functional properties and for this reason they have been named inorganic chameleon. Nevertheless, their actual applications require the availability of these systems in thin‐film form synthesized through a simple, scalable, and straightforward technique. Metal‐organic chemical vapor deposition (MOCVD) has been shown to be an outstanding process to prepare thin films of multi‐component oxides. Herein, the focus is devoted to oxide perovskite thin films on both single crystal and non‐single crystal substrates through MOCVD processes. This study discusses the principles and the basic rules governing conventional, plasma‐enhanced, and liquid‐assisted MOCVD processes. Among a plethora of oxide perovskites, several classes of functionalities belonging to the perovskite class: from superconductors to dielectrics and giant‐k dielectrics, from colossal magnetoresistance to ionic conductors, piezoelectrics and ferroelectrics, are explored in detail.