Hybrid Halide Perovskite‐Based Near‐Infrared Photodetectors and Imaging Arrays

Abstract Hybrid halide perovskites have been demonstrated to be prospective materials in optoelectronic devices due to their outstanding photoelectric properties and facile manufacturability by low‐cost and fast solution‐processed methods. Particularly, to meet increasingly potential applications in near‐infrared (NIR) detection and imaging, perovskites have been introduced and explored their roles, some of which achieve the comparable performance with traditional silicon counterparts. Here, the recent advancements of hybrid halide perovskite‐based NIR photodetectors and imaging arrays in terms of perovskite formation, device structures, working mechanisms, and device performances are reviewed. Pb perovskite‐based devices either employ sub‐bandgap absorption and intraband transition, or incorporate with narrow‐bandgap semiconductors to achieve NIR detection, which could reach the spectral response onset at 2.6 µm wavelength. Sn perovskite‐based devices employ the strategies of template‐assisted engineering and reducing additives to inhibit the oxidation of Sn 2+ states for efficient detection. SnPb mixed perovskite devices employ compositional engineering, passivation strategies, crystallization tuning, and encapsulation to achieve efficient and long shelf‐life photodetectors with an external quantum efficiency of 70% at 940 nm wavelength. Finally, potential prospects are proposed, including spectral response extension, pixel integration, flexible devices, and stability, to advance perovskite‐based NIR detection and imaging toward commercial applications.