A Study on the Point Defect Effects on the Monolithic Silicon Carbide Tensile Features: A Molecular Dynamics Study

Silicon carbide has offered a greater impact on the composite and intermetallic industries, owed its superior material features. But its material features are entirely depended on the existence of better ambient temperature and material defects. In this current study, the impact of grain size (4.2 nm, 4.8 nm and 5.7 nm), temperature (300 K, 500 K and 700 K) and a fraction of point defects such as vacancies (0%, 3%, 6% and 9%) on the tensile performance of silicon carbide (SiC) has been investigated through the molecular dynamics method. Through the above study, it is found that structural and microstructural transformation through the diffusion mechanism plays a greater impact over the material behavior of silicon carbide monolithic nano polycrystal and additionally, it is quantified that the fraction of point defects offers a greater influence over the material features followed by the grain size and temperature. Moreover, the radial distribution function analysis has been confirmed the structural transformation behavior during tensile deformation.