PMOS逻辑
材料科学
纳米线
CMOS芯片
光电子学
硅
基质(水族馆)
晶体管
泄漏(经济)
场效应晶体管
MOSFET
栅氧化层
纳米技术
电气工程
电压
经济
宏观经济学
工程类
地质学
海洋学
作者
Ming Li,Kyongmin Yeo,Sung Dae Suk,Yun Young Yeoh,Dong-Won Kim,Tae Young Chung,Keun Sang Oh,Won-Seong Lee
摘要
In this paper, sub-10 nm gate-all-around (GAA) CMOS silicon nanowire field-effect transistors (SNWFET) on bulk Si substrate are fabricated successfully for the first time with 13-nm-diameter silicon nanowire channel. On-state currents of 1494/1054 muA/mum at off leakage currents of 102/6.44 nA/mum are obtained for N/PMOS, respectively. The impacts of nanowire diameter (DNW) and gate oxide thickness (TOX) as well S/D parasitic resistance (RSD) on performance are investigated in details.
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