电容
材料科学
光电子学
电流(流体)
电压
电气工程
化学
电极
工程类
物理化学
作者
Yow-Jon Lin,Bo Chieh Huang,Yi Chun Lien,Ching-Ting Lee,Chuen-Jinn Tsai,Hsing Cheng Chang
标识
DOI:10.1088/0022-3727/42/16/165104
摘要
Capacitance-voltage and current-voltage characteristics of Au/n-type Si (n-Si) and Au/poly(3,4-ethylenedioxythiophene) doped with poly(4-styrenesulfonate) (PEDOT:PSS)/n-Si Schottky diodes were investigated in this study. The interfacial phenomenon was explained in terms of the generation of an interfacial dipole subsequently affecting the electron-injection barrier. The authors found that inserting a PEDOT:PSS layer at the Au/n-Si interface may result in the formation of an interfacial dipole, increase the upward band bending in Si near the interface and reduce the reverse-bias leakage current. In this study, higher quality Schottky junctions were formed on n-Si using a simple technique of spin-coating PEDOT:PSS as the metal electrode. (Some figures in this article are in colour only in the electronic version)
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