流离失所(心理学)
术语
半导体器件
计算机科学
硅
帧(网络)
钥匙(锁)
辐射损伤
半导体
工程物理
材料科学
工程类
物理
光电子学
辐射
纳米技术
光学
电信
计算机安全
哲学
图层(电子)
语言学
心理学
心理治疗师
作者
J. R. Srour,Cheryl J. Marshall,Paul W. Marshall
标识
DOI:10.1109/tns.2003.813197
摘要
This paper provides a historical review of the literature on the effects of radiation-induced displacement damage in semiconductor materials and devices. Emphasis is placed on effects in technologically important bulk silicon and silicon devices. The primary goals are to provide a guide to displacement damage literature, to offer critical comments regarding that literature in an attempt to identify key findings, to describe how the understanding of displacement damage mechanisms and effects has evolved, and to note current trends. Selected tutorial elements are included as an aid to presenting the review information more clearly and to provide a frame of reference for the terminology used. The primary approach employed is to present information qualitatively while leaving quantitative details to the cited references. A bibliography of key displacement-damage information sources is also provided.
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