光致发光
分子束外延
材料科学
透射电子显微镜
旋节分解
外延
衍射
分析化学(期刊)
相(物质)
结晶学
光电子学
光学
化学
纳米技术
图层(电子)
有机化学
物理
色谱法
作者
Asli Yildirim,J. P. Prineas
摘要
Thick 2 um Ga1-xInxAsySb1-y layers lattice-matched to (100)-GaSb were grown by molecular beam epitaxy across the compositional range x = 0 to 1. By lowering the growth temperature to the 410 – 450 C range, phase separation was suppressed throughout the miscibility gap, as evidenced in measurements such as photoluminescence, high-resolution x-ray diffraction, atomic force microscopy, and cross-sectional transmission electron microscopy. Bright photoluminescence was recorded in the sample series ranging from 1.7 to 4.9 ums.
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