高分辨率透射电子显微镜
材料科学
扫描电子显微镜
同轴
透射电子显微镜
化学气相沉积
化学成分
化学工程
纳米
电子能量损失谱
纳米技术
氮化硼
涂层
分析化学(期刊)
复合材料
化学
工程类
色谱法
电气工程
有机化学
作者
Mikhaël Bechelany,Arnaud Brioude,PA Stadelmann,Gabriel Ferro,David Cornu,Philippe Miele
标识
DOI:10.1002/adfm.200700110
摘要
Abstract We present a simple process for the fabrication of very long SiC‐based coaxial nanocables (NCs). The versatility of this technique is confirmed by the ability to change the chemical composition of the NC outer layers from silica to carbon and boron nitride. The NCs consist of a SiC core approximately 30 nm in diameter with lengths up to several hundred of nanometers. The thickness of the coating is in the range 2–10 nm. The morphology and structural characterization of the NCs is investigated by scanning electron microscopy (SEM) and high‐resolution transmission electron microscopy (HRTEM), respectively, and their chemical composition is probed by electron energy loss spectroscopy (EELS). A vapor–solid growth mechanism is proposed to explain the growth of SiC‐based NCs of various chemical compositions, depending on the chemical nature of the vapor phase. Because of the large quantity of very long and interlaced NCs produced during the synthesis, the macroscopic aspect of the as‐grown material is like a self‐supported felt.
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