缓冲放大器
低压差调节器
控制理论(社会学)
电压
超调(微波通信)
调节器
电容
CMOS芯片
跌落电压
电压调节器
数学
工程类
物理
计算机科学
电子工程
电气工程
晶体管
化学
生物化学
控制(管理)
人工智能
基因
电极
量子力学
标识
DOI:10.1049/iet-cds.2010.0431
摘要
An improved flipped voltage follower (FVF) and its application to a low-dropout (LDO) voltage regulator are presented. The proposed FVF improves most weaknesses of the classical one, namely its poor time response to the output current change from low to high value and poor stability for large capacitive load. The most important parameters of the modified FVF are analysed and described by analytical expressions. The parameters of the classical FVF and the improved one are compared and discussed. LDO regulator using the improved FVF is designed and implemented in AMS CMOS 0.35 µm technology. The measurement results of a test circuit show its relatively high current efficiency of 74 and 99.93% for output current 100 µA and 50 mA, respectively. The output voltage overshoot and undershoot are below 46 and 75 mV for output current change from 0.1 to 50 mA with the rise and fall times equal to 0.3 µs, and load capacitance 0–100 pF.
科研通智能强力驱动
Strongly Powered by AbleSci AI