Fabrication and characterization of ZnxMg1−xO thin films by dc magnetron sputtering with a composite target of AZO and Mg

Using a composite target of Mg and AZO (Al-doped ZnO), thin films of the ternary compound ZnxMg1−xO were prepared by direct current (dc) reactive magnetron sputtering on Si(100), quartz and soda-lime glass substrates at different temperatures. The thin films were a single phase of ZnxMg1−xO having the basic structure of ZnO(002) at x > 0.68, the mixed structure of MgO(200) and ZnO(002) at 0.49 < x < 0.60, and pure (200)-oriented growth of MgO cubic structure at x < 0.34 at substrate temperature as low as 200 °C. The bandgap of ZnxMg1−xO can be varied from 3.30 eV to above 5.31 eV by controlling the AZO area fraction in the target. ZnxMg1−xO thin films deposited on glass with this technique may have potential applications in opto-electronic devices. (© 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)