阻挡层
阳极氧化
材料科学
图层(电子)
铝
无定形固体
氧化物
多孔性
电流密度
复合材料
表面粗糙度
冶金
化学
结晶学
量子力学
物理
作者
Mana Iwai,Tatsuya Kikuchi
标识
DOI:10.1016/j.electacta.2021.139440
摘要
Unique porous anodic aluminum oxide (PAAO) films with a completely flat barrier layer and an extremely porous loofah-like structure were fabricated by anodizing aluminum in an alkaline sodium metaborate solution. High-purity aluminum plates were anodized in a 0.3 M sodium metaborate solution at various applied voltages in the range of 0.1–200 V. A typical PAAO film with a spherical cap barrier layer was formed at voltages lower than 50 V, whereas a PAAO film with a flat barrier layer was formed at voltages higher than 100 V; this film formation was not based on the Keller-Hunter-Robinson model with the spherical barrier layer. The growth interface of the flat barrier layer exhibited an ultra-flat morphology with a minimum roughness value of 0.4 nm, which is much smaller than that of an electropolished aluminum surface. Such barrier layer morphology is expected to be formed by field-assisted dissolution without oxide flow. Although the current density slightly decreased with the applied voltage, a relatively higher current density of 6.8 Am−2 was still measured at the lowest voltage of 0.1 V. The alumina walls and the bottom barrier layer gradually thinned as the applied voltage decreased, and a loofah-like PAAO film with an ultra-high porosity of 0.93 was successfully fabricated at 0.1 V. The anodic oxide consisted of amorphous, anion-free aluminum oxide.
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