The Thermoelectric Properties of Nanostructured SiGe Phosphorus Doped by Spark Plasma Sintering

A new method for obtaining a nanostructured thermoelectric solid solution of silicon-germanium n-type using spark plasma sintering of powders is described. The novelty of the work lies in the use of a silicon phosphide compound as a doping source. Methods for measuring thermoelectric characteristics of the structures under study are described. The influence of the sintering rate on the final thermoelectric characteristics of the sintered material is revealed. The effect of high-temperature annealing on the thermoelectric properties of structures is discussed. It is shown that the described method of forming a thermoelectric material makes it possible to achieve the value of thermoelectric parameters comparable with world analogues.