Metal controlled nanoscaled dopingless MOSFET on selective/partial buried oxide

In this work, the authors demonstrate the realisation of metal controlled (MC) dopingless (DL) metal oxide semiconductor field-effect transistor (MOSFET) on a selective buried oxide (SELBOX). The different doped regions of the proposed device, such as source/drain and metal partial ground plane, have been realised with different metal work functions and the device is being named as MC-DL-SELBOX-MOSFET. A 2D simulation studies have shown MC-DL-SELBOX-MOSFET can outperform the conventionally doped SELBOX-MOSFET (D-SELBOX-MOSFET) in terms of short channel performance comparison. The severity of short channel effects is significantly less in MC-DL-SELBOX-MOSFET than D-SELBOX-MOSFET and most importantly the proposed device can be scaled below 10 nm without degrading the performance. Further, the ac analysis has shown that transconductance and cut-off frequency of the MC-DL-SELBOX-MOSFET are higher than D-SELBOX-MOSFET. Besides this, MC-DL-SELBOX-MOSFET is unhampered from the doping-related complications and can be processed at low temperatures.