Photodetection application of one-step synthesized wafer-scale monolayer MoS2 by chemical vapor deposition

Monolayer MoS2 is a known candidate to replace silicon-based materials for photodetection purposes. Achieving industrial production and application of MoS2 calls for efficient and economic synthesis of such material. Here, we report a one-step and low-cost chemical vapor deposition method for the controlled synthesis of high quality and uniform wafer-scale (approximately 9.5 × 4.5 cm) monolayer MoS2 film on SiO2/Si substrates. Using the as-synthesized MoS2 films, MoS2/PbS quantum dot hybrid device arrays are also fabricated. These hybrid devices have broad spectral photoresponse (457–1064 nm), rapid response rate, high responsivity of approximately 1.8 × 104 A W−1, and ultrahigh detectivity of approximately 7.6 × 1013 Jones, which outperforms other pristine two-dimensional as well as commercial Si and InGaAs materials. This low-cost and efficient method of growing wafer-scale monolayer MoS2, as well as the excellent performance of its hybrid device arrays, will strongly support the production and application of monolayer MoS2 in the future.