Exploring High-Performance p -Type Transparent Conducting Oxides Based on Electron Correlation in V2O3 Thin Films

Transparent conducting oxides (TCOs) are of great importance for numerous applications in optoelectronics. Though high-performance $n$-type TCOs are in commercial use, their $p$-type counterparts exhibit much lower performance, hindering critical technological development. This work sheds light on significant improvement in $p$-type TCOs through electron correlation due to on-site Coulomb interaction. This correlation not only promotes modification of the valence band but also shifts the screened plasma energy to below the visible region, and thus can be utilized as a key parameter in material design to optimize $p$-type TCOs.