9,10‐Imide‐Pyrene‐Fused Pyrazaacenes (IPPA) as N‐Type Doping Materials for High‐Performance Nonvolatile Organic Field Effect Transistor Memory Devices

Abstract The fabrication of high‐performance nonvolatile organic field effect transistor (OFET) memory devices is reported using a series of pyrene‐fused pyrazaacene (PPA) and 9,10‐imide‐pyrene‐fused pyrazaacene (IPPA) derivatives as n‐type doping components. The obtained memory devices exhibit stable switching behaviors (>100 times) and good retention properties (>10 4 s). Devices based on chlorinated IPPA (IPPA‐Cl) show the largest memory window of 40.8 V, with a trapping charge density of 2.66 × 10 12 cm −2 and on/off ratio higher than 10 6 . Our investigation reveals that low‐lying lowest unoccupied molecular orbital energy levels and small dipole moment are key parameters for achieving high memory performance. This work provides a general guideline for the design of n‐type organic semiconductors as highly efficient doping materials for organic memory devices.