响应度
材料科学
方位角
结晶度
外延
各向异性
互易晶格
光学
蓝宝石
衍射
分子束外延
光电子学
光电探测器
纳米技术
物理
复合材料
激光器
图层(电子)
作者
Rohit Pant,Arjun Shetty,Greeshma Chandan,Basanta Roul,Karuna Kar Nanda,S. B. Krupanidhi
标识
DOI:10.1021/acsami.8b05032
摘要
Nonpolar a-plane GaN epitaxial films were grown on an r-plane sapphire using the plasma-assisted molecular beam epitaxy system, with various nitrogen plasma power conditions. The crystallinity of the films was characterized by high-resolution X-ray diffraction and reciprocal space mapping. Using the X-ray “rocking curve—phi scan”, [0002], [1–100], and [1–102] azimuth angles were identified, and interdigitated electrodes along these directions were fabricated to evaluate the direction-dependent UV photoresponses. UV responsivity (R) and internal gain (G) were found to be dependent on the azimuth angle and in the order of [0002] > [1–102] > [1–100], which has been attributed to the enhanced crystallinity and lowest defect density along [0002] azimuth. The temporal response was very stable irrespective of growth conditions and azimuth angles. Importantly, response time, responsivity, and internal gain were 210 ms, 1.88 A W–1, and 648.9%, respectively, even at a bias as low as 1 V. The results were validated using the Silvaco Atlas device simulator, and experimental observations were consistent with simulated results. Overall, the photoresponse is dependent on azimuth angles and requires further optimization, especially for materials with in-plane crystal anisotropy.
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