材料科学
制作
阳极
原子层沉积
阴极
薄脆饼
纳米技术
光电子学
电解质
硅
电池(电)
薄膜
电极
电气工程
功率(物理)
化学
工程类
病理
物理化学
物理
医学
替代医学
量子力学
作者
Alexander J Pearse,Thomas E. Schmitt,Emily Sahadeo,David M. Stewart,Alexander C. Kozen,Konstantinos Gerasopoulos,A. Alec Talin,Sang Bok Lee,Gary W. Rubloff,Keith Gregorczyk
出处
期刊:ACS Nano
[American Chemical Society]
日期:2018-04-24
卷期号:12 (5): 4286-4294
被引量:141
标识
DOI:10.1021/acsnano.7b08751
摘要
Three-dimensional thin-film solid-state batteries (3D TSSB) were proposed by Long et al . in 2004 as a structure-based approach to simultaneously increase energy and power densities. Here, we report experimental realization of fully conformal 3D TSSBs, demonstrating the simultaneous power-and-energy benefits of 3D structuring. All active battery components—electrodes, solid electrolyte, and current collectors—were deposited by atomic layer deposition (ALD) onto standard CMOS processable silicon wafers microfabricated to form arrays of deep pores with aspect ratios up to approximately 10. The cells utilize an electrochemically prelithiated LiV 2 O 5 cathode, a very thin (40–100 nm) Li 2 PO 2 N solid electrolyte, and a SnN x anode. The fabrication process occurs entirely at or below 250 °C, promising compatibility with a variety of substrates as well as integrated circuits. The multilayer battery structure enabled all-ALD solid-state cells to deliver 37 μAh/cm 2 ·μm (normalized to cathode thickness) with only 0.02% per-cycle capacity loss. Conformal fabrication of full cells over 3D substrates increased the areal discharge capacity by an order of magnitude while simulteneously improving power performance, a trend consistent with a finite element model. This work shows that the exceptional conformality of ALD, combined with conventional semiconductor fabrication methods, provides an avenue for the successful realization of long-sought 3D TSSBs which provide power performance scaling in regimes inaccessible to planar form factor cells.
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