Epitaxial growth of GaN on sapphire substrate by LP-MOVPE

Using horizontal reactor LP-MOVPE,the high quality GaN epitaxial lay er is grown on C-plane and R-plane sapphire substrate.The effects of gas flow distrlbu tion and vapour phase reaction in the reactive chamber on the GaN epitaxial growth are dis cussed;and a plausible model is proposed to explain the effect of substrate orientation on the epitaxial GaN surface morphology.