石墨烯
氢
无定形碳
材料科学
单层
化学工程
无定形固体
碳纤维
氧化石墨烯纸
催化作用
石墨烯纳米带
产量(工程)
原材料
碳纳米管
制氢
纳米技术
氧化物
化学气相沉积
拉曼光谱
氢气储存
石墨
化学
有机化学
复合数
复合材料
工程类
作者
Hengxing Ji,Yufeng Hao,Yujie Ren,Matthew Charlton,Wi Hyoung Lee,Qingzhi Wu,Huifeng Li,Yanwu Zhu,Yaping Wu,Richard D. Piner,Rodney S. Ruoff
出处
期刊:ACS Nano
[American Chemical Society]
日期:2011-08-31
卷期号:5 (9): 7656-7661
被引量:97
摘要
Graphene has been grown on Cu at elevated temperatures with different carbon sources (gaseous hydrocarbons and solids such as polymers); however the detailed chemistry occurring at the Cu surface is not yet known. Here, we explored the possibility of obtaining graphene using amorphous-carbon thin films, without and with hydrogen gas added. Graphene is formed only in the presence of H(2)(g), which strongly suggests that gaseous hydrocarbons and/or their intermediates are what yield graphene on Cu through the reaction of H(2)(g) and the amorphous carbon. The large area, uniform monolayer graphene obtained had electron and hole mobilities of 2520 and 2050 cm(2) V(-1) s(-1), respectively.
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