拉曼光谱
二硫化钼
基质(水族馆)
材料科学
光致发光
剥脱关节
图层(电子)
Crystal(编程语言)
分析化学(期刊)
强度(物理)
光电子学
纳米技术
化学
光学
石墨烯
复合材料
物理
地质学
海洋学
程序设计语言
色谱法
计算机科学
作者
G. Munkhbayar,Stefano Palleschi,Francesco Perrozzi,M. Nardone,Jav Davaasambuu,L. Ottaviano
出处
期刊:Solid State Phenomena
日期:2018-01-17
卷期号:271: 40-46
被引量:14
标识
DOI:10.4028/www.scientific.net/ssp.271.40
摘要
In this study, We demonstrate mono and few layers MoS 2 samples on the SiO 2 (270nm)/Si substrate from bulk MoS 2 crystal by micromechanical exfoliation technique. We have systematically studied Atomic Force Microscopy, Raman and PL properties of mono and few layer MoS 2 on the SiO 2 (270nm)/Si substrate. First, we find that the number of layer values dependent the Raman and PL emission. First, Raman intensity area ratio of the MoS 2 E 1 2g , A 1g and 2LA modes to that area of the Si substrate increased linear with increasing number of layers MoS 2 . Second, Normalized PL intensity area of the (A) peak decreased linear with increasing number of layers MoS 2 . The value of those graphs is a method to understand the number of layers the exfoliated MoS 2 .
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