Edge-defined film-fed growth of incongruent-melting Ce,Ga:GIG crystal with high magneto-optical performance

Ce-doped Gd3Fe5O12 (GIG) crystals, which are a kind of incongruent melting compound, were successfully grown into centimeter size and good quality by an improved edge-defined film-fed growth (EFG) method. Annealing has obviously affected crystal quality, optical transmittance and saturation magnetization. Doping Ce3+ ions greatly enhances the magnetic-optical properties of GIG crystals. For Ce:GIG crystal, a suitable concentration of Ga3+ ion replacing Fe3+ is helpful to improve its magneto-optical properties. The specific Faraday rotation angle of (Ce0.35Gd2.65)(Ga1.04Fe3.95V0.01)O12 crystal is great and reaches 896 Deg. cm−1 that meets commercial requirements.