Photoconductivity of PbSe Films

P-type PbSe films were converted to n-type through the quasi-intrinsic by repeating the short bakes at 400°C in the pressure of 1×10 -8 Torr. The dark current, photocurrent, response time, thermo-electric power and temperature dependence of conductivity were measured after each operation of short bakes. The highest photosensitive film was obtained at slightly p-type region. The temperature dependence of photoconductivity at various intensities of illumination and V-I characteristics were measured. It is concluded that a photosensitive film has fully developed potential barriers in it. However, a reduction in the height of these barriers with illumination is not the dominant factor in photoconductivity.