电容器
储能
材料科学
电介质
薄膜电容器
铁电性
光电子学
钙钛矿(结构)
反铁电性
超级电容器
电气工程
纳米技术
电压
电容
功率(物理)
电极
化学
工程类
物理
结晶学
量子力学
物理化学
作者
Jieyu Chen,Yunpeng Zhou,Fei Guo,Zhehong Tang,Shifeng Zhao
出处
期刊:Tungsten
[Springer Nature]
日期:2022-10-03
卷期号:4 (4): 296-315
被引量:10
标识
DOI:10.1007/s42864-022-00179-w
摘要
Dielectric capacitors are the ideal energy storage devices because they have excellent power density, high working voltages, and a long lifespan. With its lower size and better energy storage density, film capacitors make them simpler to incorporate into circuits than traditional dielectric capacitor devices. Lead-free Nb-based perovskite ferroelectric/antiferroelectric films have strong orbital hybridization with O 2p orbitals due to unfilled d orbitals of Nb elements, forming a series of energy storage film materials with potential application value. Here, we provide an overview of the state-of-the-art lead-free Nb-based films for energy storage applications, which include K0.5Na0.5NbO3-based, K0.5Na0.5Bi4NbTi3O15-based, AgNbO3-based and NaNbO3-based films. An overview of the benefits and drawbacks of each kind of Nb-based perovskite ferroelectric/antiferroelectric films is provided, along with a description of the design tactics used to achieve high energy storage performances.
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