Low‐Temperature ALD of SbOx/Sb2Te3 Multilayers with Boosted Thermoelectric Performance

Abstract Nanoscale superlattice (SL) structures have proven to be effective in enhancing the thermoelectric (TE) properties of thin films. Herein, the main phase of antimony telluride (Sb 2 Te 3 ) thin film with sub‐nanometer layers of antimony oxide (SbO x ) is synthesized via atomic layer deposition (ALD) at a low temperature of 80 °C. The SL structure is tailored by varying the cycle numbers of Sb 2 Te 3 and SbO x . A remarkable power factor of 520.8 µW m −1 K −2 is attained at room temperature when the cycle ratio of SbO x and Sb 2 Te 3 is set at 1:1000 (i.e., SO:ST = 1:1000), corresponding to the highest electrical conductivity of 339.8 S cm −1 . The results indicate that at the largest thickness, corresponding to ten ALD cycles, the SbOx layers act as a potential barrier that filters out the low‐energy charge carriers from contributing to the overall electrical conductivity. In addition to enhancing the scattering of the mid‐to‐long‐wavelength at the SbO x /Sb 2 Te 3 interface, the presence of the SbO x sub‐layer induces the confinement effect and strain forces in the Sb 2 Te 3 thin film, thereby effectively enhancing the Seebeck coefficient and reducing the thermal conductivity. These findings provide a new perspective on the design of SL‐structured TE materials and devices.