Boosting(机器学习)
NMOS逻辑
充电泵
电容器
电子工程
电压
工程类
拓扑(电路)
电气工程
计算机科学
晶体管
机器学习
作者
Vasiliki Gogolou,Savvas Karipidis,Thomas Noulis,S. Siskos
出处
期刊:Integration
[Elsevier]
日期:2024-01-01
卷期号:94: 102076-102076
标识
DOI:10.1016/j.vlsi.2023.102076
摘要
A novel frequency boosting design technique for charge pump architectures is proposed, enabling high speed performance with no additional circuitry or design complexity. The charge pump's oscillator exploits the boosted output voltage of the topology, to provide higher switching frequency to the pumping capacitors. A Dickson charge pump using native NMOS devices is designed and fabricated in XFAB 0.18-μm process, as a product vehicle. The proposed solution is theoretically analyzed and compared to the standard approach. Mathematical analysis, together with simulation results and hardware measurements confirm the validity of the proposed technique, as well as its advantages versus the standard design methodology.
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