Effect of Vanadium Trioxide Catalyst on the Chemical Mechanical Polishing Performance on SiC–Si Facets

As a third-generation semiconductor, silicon carbide (SiC) is extensively utilized in photovoltaic power generation, 5 G communication, and new energy vehicles. However, the current method for the chemical mechanical polishing of SiC exhibits low material removal rates (MRRs) and suboptimal surface quality postpolishing. To address these challenges, we developed in this study a slurry that reduced the surface roughness of SiC–Si facets from 3.55 to 0.048 nm, achieving a MRR of 169 nm h −1 . The core removal mechanism involves a V 2 O 3 -catalyzed Fenton-like reaction to convert H 2 O 2 into ·OH radicals for the rapid oxidation of the SiC–Si facets, which produces a softer oxide layer that is subsequently removed by the mechanical action of abrasives. Consequently, ultrasmooth SiC–Si facets with no visible scratches were obtained. On the basis of ultraviolet–visible spectral photoluminescence and X-ray photoelectron spectroscopy analyses, we propose a catalytic oxidation mechanism leading to high-quality surfaces on the SiC–Si facets. In addition, the identification of the active sites of the reaction by means of simulations further validates the polishing mechanism.