Theoretical insight into the intrinsic electronic transport properties of graphene–biphenylene–graphene nanosheets and nanoribbons: a first-principles study

The I – V curves of 2D G–BPN–G devices exhibit intrinsic NDR characteristics. Adjustable metal-to-semiconductor devices can be achieved by varying the combination of H and O passivated cells in Q1D G–BPN–G nanoribbons based nanodevices.