退火(玻璃)
X射线光电子能谱
共价键
阳极连接
材料科学
表面改性
粘结强度
等离子体
硅
分析化学(期刊)
化学工程
纳米技术
化学
复合材料
光电子学
物理化学
有机化学
工程类
物理
量子力学
作者
Sho Nagai,Keisuke Nakao,Yasuo Hayashi,Shu‐hei Urashima,Hiroharu Yui
摘要
Abstract Low‐temperature (<∼200°C) bonding of glasses is a key technology for utilizing them for microfluidics, optical applications, and microelectromechanical systems. In the present study, bonding strength of SiO 2 glasses was examined for those after several surface treatment methods. As a result, it was found that two‐step (H 2 O→ NH 3 ) plasma treatment remarkably strengthened the bonding strength (>1 J/m 2 ) at the annealing temperature of 150°C. The improvement was achieved even when only one side of the bonded surfaces was plasma‐treated. X‐ray photoelectron spectroscopy revealed that the two‐step plasma treatment generated Si–NH 2 groups on the topmost surface. Upon the annealing (<200°C), the engrafted Si–NH 2 was desorbed from the bonded interface, indicating that the Si–NH 2 effectively reacted with Si–OH on the other side to form Si–O–Si covalent bonds. This study contributes to understanding of the role of surface functional groups for bonding reaction. Furthermore, the method proposed here would be promising as a production technology because it enables glass bonding at lower temperatures with a simple plasma system.
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