背光
量子点
色域
光电子学
有机发光二极管
共发射极
材料科学
二极管
液晶显示器
发光二极管
像素
计算机科学
显示设备
光致发光
纳米技术
人工智能
操作系统
图层(电子)
作者
Yizhe Sun,Yibin Jiang,Xiao Wei Sun,Shengdong Zhang,Shuming Chen
标识
DOI:10.1002/tcr.201800191
摘要
Abstract The unique features of solution‐processed quantum dots (QDs) including emission tunability in the visible range, high‐quality saturated color and outstanding intrinsic stability in environment are highly desired in various application fields. Especially, for the preparation of wide color gamut displays, QDs with high photoluminescence quantum yield are deemed as the optimal fluorescent emitter that has been utilized in the backlight for liquid crystal display. Nevertheless, the commercialization of electrically driven self‐emissive quantum dot light‐emitting diode (QLED) display is the ultimate target due to its merits of high contrast, slim configuration and compatibility with flexible substrate. Through the great efforts devoted to material engineering and device configuration, astonishing progresses have been made in device performance, giving the QLED technology a great chance to compete with other counterparts for next‐generation displays. In this review, we retrospect the development roadmap of QLED technology and introduce the essential principles in the QLED devices. Moreover, we discuss the key factors that affect the QLED efficiency and lifetime. Finally, the advances in device architectures and pixel patterning are also summarized.
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