Toggle MRAM: A highly-reliable Non-Volatile Memory
作者
M. Durlam,B. Craigo,M. DeHerrera,B. N. Engel,G. Grynkewich,Baoxin Huang,J. Janesky,Marie‐Blandine Martin,B. Martino,J. Salter,J. M. Slaughter,L. Wise,S. Tehrani
标识
DOI:10.1109/vtsa.2007.378942
摘要
Magnetoresistive Random Access Memory (MRAM) is based on magnetic tunnel junction devices integrated with standard CMOS, resulting in high-speed read and write, unlimited endurance, and the highest reliability of any non-volatile memory. The first commercially available MRAM product, Freescale's 4Mb MR2A16A Toggle MRAM, was released for production in 2006 and is now in volume production. In this paper we provide an overview of Freescale's MRAM technology and describe the performance and reliability attributes of the MR2A16A.