吸附
硅烷
动力学
解吸
化学
氢
硅烷
材料科学
化学工程
物理化学
有机化学
量子力学
物理
工程类
作者
Maki Suemitsu,Ki Joon Kim,Hiroyuki Nakazawa,Nobuo Miyamoto
标识
DOI:10.1016/s0169-4332(96)00489-8
摘要
Silane adsorption kinetics on Si(100) at elevated temperatures has been investigated from the gas-source MBE growth rate and hydrogen coverage of the grown surface at T=450–850°C. Silane adsorption most probably changes its mode near 600°C, from two-site adsorption below this temperature to four-site adsorption as the adsorption temperature is increased. A unified interpretation is given for this temperature-dependent behavior of silane adsorption, from the possible presence of a SiH3 adsorption precursor and its thermally activated desorption from the surface.
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