Thin tantalum films on crystalline silicon – a metallic glass

Abstract Thin amorphous tantalum films are prepared on Si(111) substrates in a metallic glassy state. The amorphous monoatomic state of the film is characterized by X‐ray diffraction studies. The glassy state leads to a negative t emperature c oefficient of the r esistivity (TCR) for low sample temperatures <200 K which is attributed to incipient localization. Above 200 K a positive TCR is observed as expected for a normal Boltzmann transport regime. Upon heating the Si substrate to 1200 K TaSi 2 is formed out of the amorphous tantalum film and the silicon substrate. The TaSi 2 layer is crystalline as evident from X‐ray diffraction data. magnified image Schematic drawing of the evaporation setup on either glass or silicon samples. Scheme of annealing effects. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)