薄脆饼
蒙特卡罗方法
抵抗
放大倍数
计量学
扫描电子显微镜
光学
散射
材料科学
图像分辨率
纳米技术
物理
数学
统计
图层(电子)
作者
L. Grella,Gian Lorusso,Tim Niemi,Tzu-chin Chuang,D. L. Adler
摘要
SEM based CD control and wafer inspection has an increasingly active role in the semiconductor industry. Current design rules require a CD control with a precision in the nanometer range. In order to achieve this precision, a complete model of the image formation mechanism is desirable. For this reason we present a three-dimensional simulation of scanning electron microscope (SEM) images. The simulations include Monte Carlo electron scattering, charging in the substrate and electron ray-tracing in the column. We investigate some specific cases in CD-SEM metrology: We will describe the effect of scan orientation relative to the orientation of the imaged feature on the apparent beam width (ABW), the effect of magnification on contact imaging, and the effect of residue in resist trenches. Our results, regarding these examples, clearly indicate that a fully three-dimensional numerical simulation is needed to obtain an understanding of image formation and resolution limiting factors.
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