Development of 157 nm Photoresist Polymers for F 2 Laser Lithography

Development of 157 nm photoresist polymers for F 2 laser lithography is a great challenge to polymer scientists and technologists. 157 nm lithography has emerged as the promising candidate for extending conventional photolithographic methods to the sub-100 nm device generation for the electronic applications. Among the difficulties of several daunting materials challenge for this development, transparency of the photoresist polymer is the most difficult job. The review attempts to investigate the problems, significance, and the recent development strategies of photoresist polymers for 157 nm lithography.