材料科学
铁电性
纳米线
磁滞
光电子学
晶体管
非易失性存储器
电容
负阻抗变换器
场效应晶体管
泄漏(经济)
电压
纳米技术
电极
电气工程
凝聚态物理
电介质
化学
物理
工程类
物理化学
电压源
经济
宏观经济学
作者
Young Tea Chun,Jiyoul Lee,Daping Chu
摘要
We demonstrate a flexible ferroelectric polymer-based memory with a zinc oxide (ZnO) single-nanowire transistor; its enhanced memory properties are attributed to the limited size of the semiconducting single-nanowire, which suppresses leakage currents caused by parasitic capacitance. Memory devices based on hybrid ferroelectric field-effect transistors (Fe-FETs) exhibit an outstanding data retention time, with an on/off ratio of ∼107 for 104 s along with a highly stable endurance for 100 cycles, without drain current degradation at a readout voltage of 0.1 V. Furthermore, these enhanced characteristics lead to a robust performance, overcoming the changes in the hysteresis window caused by flexoelectricity under bending stress; thus, the flexible-polymer Fe-FET with a ZnO single-nanowire channel shows a multilevel switching behavior with three different drain current states under bending conditions.
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