量子点
X射线光电子能谱
半最大全宽
量子产额
磷化铟
材料科学
光谱学
发光
光致发光
表面改性
钝化
分析化学(期刊)
光电子学
纳米技术
化学
化学工程
光学
物理化学
有机化学
物理
工程类
荧光
量子力学
砷化镓
图层(电子)
作者
Derrick Allan Taylor,Justice Agbeshie Teku,Sinyoung Cho,Weon‐Sik Chae,Seock-Jin Jeong,Jong‐Soo Lee
标识
DOI:10.1021/acs.chemmater.1c00348
摘要
Indium phosphide (InP)-based quantum dots (QDs) are widely studied as environmentally friendly light emitters for display applications. However, the synthesis of InP QDs with optical properties that meet high color quality as comparable with cadmium (Cd)- and lead (Pb)-based QDs is challenging. In this article, we present the synthesis of surface-modified bright green luminescence InP core–shell quantum dots (CS-QDs) with the narrowest full width at half-maximum (fwhm) of 33 nm, absolute quantum yield (QY) of 71%, and an absorption spectra valley/depth (V/D) ratio of 0.61 after a size selection purification process. Our approach first emphasizes the heating temperatures for InP growth and second on the importance of surface stabilization of this system. We developed a two-step heating-up process to grow In(Zn)P core and coated inorganic shell with ZnSe/ZnSeS/ZnS composition. In situ surface treatment with zinc chloride (ZnCl2) and 1-octanol was carried out to enhance the PLQY and improve the surface passivation of the CS-QDs. Optical spectroscopy and surface characterization techniques including nuclear magnetic resonance (NMR), X-ray photoelectron spectroscopy (XPS), and infrared (IR) spectroscopy were used to analyze the properties of the CS-QDs. We suggest that this work motivates future development and optimization of surface chemistry of InP CS-QDs to enable the full access and realization of their luminescence efficiency in high-color-quality cadmium (Cd)-free displays.
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