Lattice expansion/contraction triggered by etching-assisted strain engineering of cobalt sulfide heterostructures to boost electromagnetic wave absorption

材料科学 格子(音乐) 电介质 凝聚态物理 硫化物 异质结 极化(电化学) 光电子学 激发极化 晶体结构 六边形晶格 化学物理 硫化钴 散射 互易晶格 化学工程 晶格常数 纳米技术
作者
Zhuolin Liu,Jiaolong Liu,Hui bian,Xuejiao Zhou,Hongsheng Liang,Junkai Ren,Peijun Zhang,Dan Qu,Fengxia Li,Siyu Zhang,Bing Wei,Hongjing Wu
出处
期刊:Advanced powder materials [Elsevier BV]
卷期号:5 (2): 100367-100367 被引量:3
标识
DOI:10.1016/j.apmate.2025.100367
摘要

Lattice-level design presents a promising avenue to overcome the bottleneck of achieving a broadband dielectric response in transition metal chalcogenides. However, the selective control of lattice characteristics (expansion or contraction) in multiphase systems remains challenging, and their specific effects on electromagnetic modulation are poorly understood. Herein, we propose an etching-assisted strain engineering strategy to deliberately trigger lattice distortions and regulate lattice expansion and contraction in cobalt sulfide heterostructures. We demonstrate that the sequence of processing steps is critical: an etching-first-sulfurization-later approach (Route 1) preferentially induces tensile strain and lattice expansion, whereas a sulfurization-first-etching-later (Route 2) pathway favors compressive strain and lattice contraction. Compared to the strain-free cobalt sulfide (C-0), the optimal sample (C-24) achieves a comparable coexistence of local lattice expansion and contraction via Route 1. This coexistence expedites localized lattice perturbations, enriches lattice distortion-related sulfur vacancies, and intensifies multiphase heterointerfaces, collectively boosting the dielectric polarization response. Consequently, this elaborate strategy enables an effective absorption bandwidth of 5.45 GHz with excellent polarization behavior, which are 1.83-fold and 1.93-fold improvement over C-0, respectively. This work provides a novel strategy for manipulating polarization response at the lattice level, offering valuable insights for the rational design of advanced heterogeneous absorbents based on lattice strain engineering. An etching-assisted strain engineering strategy driven by forward etching-sulfuration sequenceand reverse sulfuration-etching path, is innovatively proposed to trigger lattice distortions for lattice expansion/contraction. Compared to the unetched strain-free cobalt sulfides, comparable coexistence of local lattice expansion/contraction expedites localized lattice perturbations, and therefore, enriches lattice distortion-related sulfur vacancies and intensifies multiphase heterointerfaces, collectively contributing to boost dielectric polarization response for the first time. • A strain-engineered lattice distortion strategy is employed. • Route 1 motivates lattice expansion while Route 2 brings lattice contraction. • An effective absorption bandwidth of 5.45 GHz (1.83 times improvement) is achieved.
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