超导电性
相图
凝聚态物理
材料科学
相(物质)
超导转变温度
电子能带结构
高压
室温超导体
环境压力
物理
高温超导
带隙
电子结构
相变
作者
Chengcheng Zhu,Jingkun Yu,Yiping Gao,Chuang Jiang,Weibin Wang,Changli Liu,Yuqiang Fang,X. R. Huang
出处
期刊:Nano Letters
[American Chemical Society]
日期:2026-02-05
标识
DOI:10.1021/acs.nanolett.5c06059
摘要
Exploring flat-band superconductivity is of paramount importance, as it addresses key challenges in condensed matter physics, including the interplay between electronic topology, correlation effects, and superconductivity. In this work, we have unambiguously established the superconducting phase diagram in quasi-one-dimensional Mo4S2I6 through the band adjustments driven by pressure and iodine vacancies. When iodine vacancies in the Mo4S2I6-δ reach δ = 0.48, the superconducting pressure is significantly reduced and a record-high superconducting critical temperature (Tc) is achieved with 13.1 K at 2 GPa among quasi-one-dimensional materials. Theoretical calculations reveal that iodine vacancies introduce band gaps narrowing and the emergence of flat bands derived from intrachain interactions, with higher concentrations strengthening this effect, while pressure suppresses flat bands. The flat band boosts electron-electron interactions, allowing superconductivity at pressures much lower than those of defect-free crystals. Defect engineering and pressure tuning jointly advance high-temperature superconductivity in low-dimensional materials and provide critical insights into superconductivity mechanisms.
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