Single‐Crystal Growth and Characterization of β ‐Ga 2 O 3 (1 0 0) for GaP/Ga 2 O 3 Heterostructures by Hydride Vapor Phase Epitaxy

Single‐crystal growth of (100) β ‐Ga 2 O 3 and the attempt to grow GaP on it by hydride vapor phase epitaxy (HVPE) is been described. The phase purity and (100) orientation of the crystal is confirmed by X‐ray diffraction (XRD). The selected area electron diffraction pattern confirms the monoclinic structure with a C2/m space group of β ‐Ga 2 O 3 . Raman results reveal the stretching and bending vibrations of GaO and GaOGa octahedrons, respectively. The wafer exhibits ≈80% optical transmission and surface roughness of ≈5 nm. GaP layers are grown on (100)‐oriented β ‐Ga 2 O 3 substrates by HVPE. The GaP/ β ‐Ga 2 O 3 heterostructures are characterized using XRD and Raman spectroscopy. Diffraction peak at (111) confirms the zinc blende phase of GaP. The longitudinal optical (405 cm −1 ) and transverse optical (368 cm −1 ) phonon modes in the Raman spectra confirm the crystalline GaP. Further optimization is expected to enhance the crystalline quality of the GaP layer on the Ga 2 O 3 wafer. The potential of GaP/(100) β ‐Ga 2 O 3 heterostructures are highlighted.