材料科学
光伏系统
太阳能电池
光电子学
薄膜
碲化镉光电
退火(玻璃)
锑
结晶度
纳米技术
工程物理
硒化物
薄膜太阳能电池
复合材料
电气工程
冶金
工程类
硒
作者
Qi Zhao,Rongfeng Tang,Shangfeng Yang,Tao Chen
标识
DOI:10.1002/advs.202511387
摘要
Antimony selenide (Sb2Se3) has attracted increasing attention as a promising photovoltaic absorber due to its superior optoelectronic properties and ample application potential in thin-film solar cells. High-performance Sb2Se3 solar cell is closely tied to the quality of Sb2Se3 active layer, which requires careful design of the interfacial and bulk defects, as well as crystallinity of the thin films. Postprocessing procedures show great potential to address defect issues and improve the conductivity of solar cells. Therefore, developing efficient and reliable post-treatment techniques is crucial for advancing Sb2Se3 solar cell technology. In this review, recent post-treatment methodologies are summarized toward high-quality Sb2Se3 thin films, categorizing the strategies into two main types: thermal annealing (TA)-related techniques and TA-free techniques. Furthermore, the effects of these strategies are discussed on Sb2Se3 crystal characteristics, including defects, optoelectronic properties, and film morphology, all of which are closely related to device performance. Finally, the critical challenges and perspectives are proposed regarding this new solar cell materials, practical guidelines are also provided for fabricating high-quality Sb2Se3 layers for highly efficient Sb2Se3 solar cells.
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