Post‐Treatment Strategies Toward High‐Quality Sb2Se3 Thin Films in Photovoltaic Applications

Abstract Antimony selenide (Sb 2 Se 3 ) has attracted increasing attention as a promising photovoltaic absorber due to its superior optoelectronic properties and ample application potential in thin‐film solar cells. High‐performance Sb 2 Se 3 solar cell is closely tied to the quality of Sb 2 Se 3 active layer, which requires careful design of the interfacial and bulk defects, as well as crystallinity of the thin films. Postprocessing procedures show great potential to address defect issues and improve the conductivity of solar cells. Therefore, developing efficient and reliable post‐treatment techniques is crucial for advancing Sb 2 Se 3 solar cell technology. In this review, recent post‐treatment methodologies are summarized toward high‐quality Sb 2 Se 3 thin films, categorizing the strategies into two main types: thermal annealing (TA)‐related techniques and TA‐free techniques. Furthermore, the effects of these strategies are discussed on Sb 2 Se 3 crystal characteristics, including defects, optoelectronic properties, and film morphology, all of which are closely related to device performance. Finally, the critical challenges and perspectives are proposed regarding this new solar cell materials, practical guidelines are also provided for fabricating high‐quality Sb 2 Se 3 layers for highly efficient Sb 2 Se 3 solar cells.